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HiperFET TM
Power MOSFETs
Q-Class
IXFA4N100Q
IXFP4N100Q
V DSS
I D25
R DS(on)
= 1000V
= 4A
≤ 3.0 Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
Fast Intrinsic Diode
G
Symbol
Test Conditions
Maximum Ratings
S
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1000
1000
± 20
± 30
V
V
V
V
TO-220AB (IXFP)
D (Tab)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
4
16
4
700
A
A
A
mJ
G
DS
D (Tab)
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
5
150
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T L
T SOLD
M C
M d
Weight
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-263
TO-220
300
260
10..65/2.2..14.6
1.13/10
2.5
3.0
°C
°C
Nm/lb.in.
Nm/lb.in.
g
g
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Low Q G
Low R DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
V GS(th) V DS = V GS , I D = 1.5mA
Characteristic Values
Min. Typ. Max.
1000
2.5 4.5
V
V
Advantages
High Power Density
Easy to Mount
Space Savings
I GSS
I DSS
R DS(on)
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
± 100 nA
50 μ A
1 mA
3.0 Ω
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS98705B(04/11)
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